Innovations for High Performance Microelectronics

IHP GmbH – Innovations for High-Performance Microelectronics is a public funded German research institute located in Frankfurt (Oder) in Germany. With 280 employees and around 26 Mio EUR annual turn-over for operation cost and invest IHP is dedicated to innovative solutions for wireless and broadband communication systems by close co-work of teams working in the fields of material research, process technology, circuit design, and systems. IHP owns a 1000 square meter, class-1 clean room and pilot line with production-grade tool-set for 0.25 and 0.13 μm technologies and offers its SiGe BiCMOS technologies for Multi Project Wafer service and low-volume prototyping also to external customers.

 

Contact

Bernd Heinemann
IHP
Im Technologiepark 25
D-15236 Frankfurt (Oder)  
+49 335 5625 147
Fax: +49 335 5625 327

IHP building

 

 

IHP pilotline

 

 

IHP wafer

 

 

Role in the project

In close collaboration with Infineon, IHP is working in WP1 on advanced device architectures. Non-standard device concepts will be further explored and optimized, which were identified in the DOTFIVE project to have a potential for an improved HBT performance up to the project goal of 700 fmax. Possibilities for enhancement of the fT as well as the CMOS compatibility will be investigated. In collaboration with WP2, WP3 and WP4, periodic circuit fabrication cycles will be provided for demonstrator development.

 

Key people involved in the project

Bernd Heinemann received the diploma degree in physics from the Humboldt University of Berlin, Germany, in 1984, and the Dr.-Ing. degree in electrical engineering from the Technische Universität Berlin, Germany, in 1997.He joined the IHP in 1984. Since 1993 he is a member of a team working on the exploration and technological implementation of SiGe HBTs.

Holger Rücker received the diploma degree and the Ph.D. degree in physics from the Humboldt University of Berlin, Germany, in 1986 and 1988, respectively. He joined IHP in Frankfurt (Oder), Germany in 1992. His research interests include SiGe bipolar devices physics and technology and CMOS and BiCMOS process development.

Alexander Fox received the Diploma degree in electrical engineering from the RWTH Technical University Aachen, Germany, in 1999, and the Ph.D. degree in engineering sciences from the Christian-Albrechts-Universität Kiel, Germany, in 2006. In 2000, he joined the IHP in Frankfurt, Germany, as a research assistant in the process integration group

 

All team

 

 

Recent publications / patents

  • B. Heinemann, A. Fox, and H. Rücker, "Advanced Transistor Architectures for Half-Terahertz SiGe HBTs,"  ECS transactions, vol. 50, no. 9, 2012, pp. 61-72.

  • H. Rücker, B. Heinemann, A. Fox, “Half-Terahertz SiGe BiCMOS technology”, Proc. IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Santa Barbara, CA, USA, January 16-18, 2012,  pp. 133-136.

  • H. Rücker, B. Heinemann, R. Barth, M. Lisker, “Impact of back end stress on SiGe bipolar transistors,” Technical Digest, IEEE International Electron Device Meeting (IEDM), Washington DC, USA, December 05-07, 2011, pp. 805-808.

  • A. Fox, B. Heinemann, R. Barth, S. Marschmeyer, Ch. Wipf, Y. Yamamoto, " SiGe:C HBT Architecture with Epitaxial External Base," Proceedings, IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Atlanta, GA, USA, October 09-11, 2011, pp. 70-73.

  • A. Fox, B. Heinemann, and H. Rücker, “Double-polysilicon SiGe HBT architecture with lateral base link,” Solid State Electronics, vol. 60, 2011, pp. 63-67.

  • B. Heinemann, R. Barth, D. Bolze, J. Drews, G.G. Fischer, A. Fox, O. Fursenko, T. Grabolla, U. Haak, D. Knoll, R. Kurps, M. Lisker, S. Marschmeyer, H. Rücker, D. Schmidt, J. Schmidt, M.A. Schubert, B. Tillack, C. Wipf, D. Wolansky, Y. Yamamoto, “SiGe HBT Technology with fT/fmax of 300 GHz/500 GHz and 2.0 ps CML Gate Delay”, Technical Digest, IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA, December 06-08, 2010, pp. 688-691.


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