Infineon Technologies AG

Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2012 fiscal year (ending September 30), the Company reported sales of Euro 3.9 billion with close to 26,700 employees worldwide. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY). Further information is available at www.infineon.com

 

Contact

Dr. Rudolf LACHNER
+49 89 234 49952

Infineon’s Production & Development Site in Dresden, Germany, where the integration of advanced SiGe HBT modules into a 130 nm CMOS process will be investigated

 

Infineon’s Headquater in Neubiberg, Germany, where the project coordination,  concept engineering, test- & modelling and design system departments are located

 

 

Infineon’s Production & Development Site in Regensburg, Germany, where the competence center for epitaxial SiGe deposition, mmWave copper backend processing and wafer level packaging is located

 

Role in the project

Infineon is in charge of the overall project coordination of DOTSEVEN. The project coordinator (PC) is  the interface between the Consortium and the European Commission. He is  responsible for the day-to-day strategic and operational management of the project (WP6) and will be supported by an external consultant organization (ALMA). Within the technical program Infineon will mainly focus on the development of ultrafast SiGe HBT transistors and their integration into an existing 130 nm CMOS production process (WP1). Together with IHP we will take over the fabrication of benchmark and demonstrator circuits. Infineon will also contribute to WP3 (modelling) and WP4 (application).


 

Key people involved in the project

Rudolf Lachner (project coordinator) received the Diploma and Ph. D. degrees in Physics from Technical University Munich, Germany, in 1978 and 1984 respectively. As a Senior Principal in the field of RF technologies his main research interests are currently in pushing the limits of SiGe technology into the Terahertz region and paving the way to broad usage of Si based mm-wave technology in new safety and communication applications.

Klaus Aufinger (design kits, models) received the Diploma and the Ph. D. degrees in Physics from the University of Innsbruck, Austria, in 1990 and 2001, respectively. In 1991, he joined the Corporate Research and Development of Siemens AG, Munich, Germany, where he investigated noise in submicron bipolar transistors. Now he is with Infineon Technologies working in the field of device physics, technology development and modeling of advanced SiGe technologies for high-speed digital and analog circuits.

Josef Böck (SiGe BiCMOS concepts and process integration) received the Diploma degree in Physics and the Ph. D. degree from University of Regensburg, Germany, in 1994 and 1997, respectively. He joined the Corporate Research and Development of Siemens, Munich, Germany, in 1993. He is now with Infineon Technologies and is engaged in the development of advanced on SiGe bipolar / bicmos technologies for high speed communications and automotive radar.

Herbert Knapp (sub-mm wave circuit design) received the Diploma and Ph.D. degrees in Electrical Engineering from Technical University Vienna, Austria, in 1997 and 2000, respectively. In 1993, he joined Siemens, Corporate Technology, in Munich, Germany, where he worked on circuits for wireless communications and highspeed data transmission. He is now with Infineon Technologies, Munich, Germany, and is engaged in the design of circuits for automotive radar applications

Wolfgang Liebl (SiGe HBT development) received the Diploma degree in Physics from the Technical University Munich, Germany in 1998. In 1998 he joined Infineon Technologies in Munich where he worked on technology and device development for GaAs pHEMTs. From 2002 until 2005 he was with TriQuint Semiconductor, Inc. Hillsboro, OR (USA) where he continued his work on III-V semiconductor devices. Since 2005 he is with Infineon Technologies Regensburg, Germany and is engaged in the development of advanced SiGe bipolar / bicmos technologies for high speed communications and automotive radar.

Andreas Pribil (SiGe BiCMOS process development) received the diploma degree in electrical engineering from the University of Ulm, Germany in 2000. After a short period at the Daimler Chrysler Research Center in Ulm, Germany he joined Infineon Technologies in Munich, Germany where he worked in the process integration department on bipolar and bicmos technologies. Since 2002 he is with Infineon Technologies Dresden, Germany and is engaged in diverse process integration and technology development topics for bicmos, embedded flash and embedded power technologies.
 

Mingxia Wu-Lutzenberger Financial and administrative support

 

 

  

 

 

Recent publications / patents

An overview of the technological developments carried out on SiGe HBTs in the frame of the European project DOTFIVE, which forms an important base of DOTSEVEN, can be found in:

  • P. Chevalier, T.F. Meister, B. Heinemann, S. Van Huylenbroeck, W. Liebl, A. Fox, A. Sibaja-Hernandez and A. Chantre, Towards THz SiGe HBTs, Proc. of IEEE BCTM 2011, pp. 57-65.

A further important base for the DOTSEVEN project forms the investigation of the ultimate performance limits of high-speed SiGe HBTs within practical constraints:

  • M. Schroeter, G. Wedel, B. Heinemann, C. Jungemann, J. Krause, P. Chevalier, A. Chantre, Physical and Electrical Performance Limits of High-Speed SiGeC HBTs – Part I: Vertical Scaling, IEEE Trans. Electron Devices, vol. 58, no 11, 2011, pp. 3687 – 3696.

  • M. Schroeter, J. Krause, N. Rinaldi, G. Wedel, B. Heinemann, P. Chevalier, A. Chantre, Physical and Electrical Performance Limits of High-Speed SiGeC HBTs – Part II: Lateral Scaling, IEEE Trans. Electron Devices, vol. 58, no 11, 2011, pp. 3697 – 3706.

Examples for record circuit performance, on which DOTSEVEN can build, are found in:

  • M. Jahn, K. Aufinger, T.F. Meister, and A. Stelzer, 125 to 181 GHz Fundamental-Wave VCO Chips in SiGe Technology, Proc. of IEEE RFIC 2012, pp. 87-90.

  • Yan Zhao, E. Ojefors, K. Aufinger, T.F. Meister, U.R. Pfeiffer, A 160-GHz Subharmonic Transmitter and Receiver Chipset in an SiGe HBT Technology, IEEE Trans. Microwave Theory and Techniques, vol. 60, no. 10, 2012, pp. 3286-3299.

  • H. Knapp, T.F. Meister, W. Liebl, D. Claeys, T. Popp, K. Aufinger, H. Schaefer, J. Boeck, S. Boguth, R. Lachner, Static Frequency Dividers up to 133 GHz in SiGe:C Bipolar Technology, Proc. of IEEE BCTM 2010, pp. 29-32.

  • H. Knapp, T.F. Meister, W. Liebl, K. Aufinger, H. Schaefer, J. Boeck, S. Boguth, and R. Lachner, 168 GHz Dynamic Frequency Divider in SiGe:C Bipolar Technology, Proc. of IEEE BCTM 2009, pp. 190-193.


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